Preparation and Characterization of Non-Aromatic Ether Self-Assemblies on a HOPG Surface

Crosbi ID309485
Bib IRB ID1193904
Year2022
StatusObjavljeno
Typeprilog u časopisu
Subtypeizvorni znanstveni rad
AuthorsAlić, Jasna; Biljan, Ivana; Štefanić, Zoran; Šekutor, Marina
JournalNanotechnology
Volume33
Issue35
Pages355603, 12
DOI10.1088/1361-6528/ac6e72
ISSN0957-4484
EISSN1361-6528
Titles

en original Preparation and Characterization of Non-Aromatic Ether Self-Assemblies on a HOPG Surface

Abstracts
en original

On-surface self-assemblies of aromatic organic molecules have been widely investigated, but the characterization of analogous self-assemblies consisting of fully sp3-hybridized molecules remains challenging. The possible on-surface orientations of alkyl molecules not exclusively comprised of long alkyl chains are difficult to distinguish because of their inherently low symmetry and non-planar nature. Here, we present a detailed study of diamondoid ethers, structurally rigid and fully saturated molecules, which form uniform 2D monolayers on a highly oriented pyrolytic graphite (HOPG) surface. Using scanning tunneling microscopy (STM), various computational tools, and X-ray structural analysis, we identified the most favorable on-surface orientations of these rigid ethers and accounted for the forces driving the self-organization process. The influence of the oxygen atom and London dispersion interactions were found to be responsible for the formation of the observed highly ordered 2D ether assemblies. Our findings provide insight into the on-surface properties and behavior of non-aromatic organic compounds and broaden our understanding of the phenomena characteristic of monolayers consisting of non- planar molecules.

Keywords

en original diamondoids; London dispersion interactions; highly oriented pyrolytic graphite (HOPG); ethers; monolayers

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Citations
Alić, Jasna; Biljan, Ivana; Štefanić, Zoran; Šekutor, Marina
Preparation and Characterization of Non-Aromatic Ether Self-Assemblies on a HOPG Surface // Nanotechnology, 33 (2022), 35; 355603, 12. doi: 10.1088/1361-6528/ac6e72
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